NTE237 Silicon NPN Transistor RF Power Output (P = 3.5W, 27MHz) O Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage (R = 10), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V BE CER EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Emitter Current, I E Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +175C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 30V, I = 0 10 A CBO CB E DC Current Gain h V = 5V, I = 500mA 10 30 140 FE CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 100mA 1.0 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 500mA 1.2 V BE CE C Current Gain Bandwidth Product f V = 10V, I = 200mA 150 300 MHz T CE E Output Capacitance C V = 10V, I = 0, f = 1MHz 25 50 pF ob CB E Output Power P V = 12V, f = 50MHz, 4 5 W O CC P = 0.4W in.335 (8.5) Dia Max .315 .059 (1.5) (8.0) .143 (3.65) Min .019 (0.48) Dia .200 (5.08) Dia Base Collector .126 (3.2) Dia .532 (13.5) Max Emitter .689 (17.5) 1.024 (26.0) Max