NTE2416 (NPN) & NTE2417 (PNP) Silicon Complementary Transistors w Digital /2 BuiltIn Bias 22k Resistors (Surface Mount) Features: BuiltIn Bias Resistors Small SOT23 Surface Mount Package Applications: Switching Circuits Inverters Interface Circuits Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 A CBO CB E I V = 40V, I = 0 0.5 A CEO CE B Emitter Cutoff Current I V = 5V, I = 0 70 113 150 A EBO EB C DC Current Gain h V = 5V, I = 10mA 50 FE CE C CollectorBase Breakdown Voltage V I = 10 A, I = 0 50 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 100 A, R = 50 V (BR)CBO C BE CollectorEmitter Saturation Voltage V I = 10mA, I = 0.5mA 0.1 0.3 V CE(sat) C B Current GainBandwidth Product f T NTE2416 V = 10V, I = 5mA 250 MHz CE C NTE2417 200 MHzElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance C ob NTE2416 V = 10V, f = 1MHz 3.5 pF CB NTE2417 5.3 pF Input OFF Voltage V V = 5V, I = 100 A 0.8 1.1 1.5 V I(off) CE C Input ON Voltage V V = 0.2V, I = 10mA 1.0 1.9 3.0 V I(on) CE C Input Resistance R 15 22 29 k 1 Input Resistance Ratio R /R 0.9 1.0 1.1 1 2 Output Output PNP NPN Input Input GND GND .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)