X-On Electronics has gained recognition as a prominent supplier of NTE2508 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2508 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2508 NTE

NTE2508 electronic component of NTE
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See Product Specifications
Part No.NTE2508
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 120V; 300mA; 8W; TO126
Datasheet: NTE2508 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.4412 ea
Line Total: USD 35.53 
Availability - 7
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 8
Multiples : 1
8 : USD 4.4412
10 : USD 4.0375
100 : USD 3.2
250 : USD 3.125
500 : USD 3.025
1000 : USD 2.8625
2500 : USD 2.7875
5000 : USD 2.75

12
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 4.55
3 : USD 4.102
6 : USD 3.136
15 : USD 2.954

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2508 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2508 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2508 (NPN) & NTE2509 (PNP) Silicon Complementary Transistors Video Output for HDTV Features: High Gain Bandwidth Product: f = 500MHz T High Breakdown Voltage: V = 120V Min CEO Low Reverse Transfer Capacitance and Excellent HF Response Applications: HighDefinition CRT Display Video Output WideBand Amp Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO Collector to Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO Emitter to Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 0.1 A EBO EB C DC Current Gain h V = 10V, I = 50mA 40 320 FE CE C V = 10V, I = 200mA 20 CE C Gain Bandwidth Product f V = 10V, I = 50mA 400 MHz T CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2508 C V = 30V, f = 1MHz 3.1 pF ob CB NTE2509 4.4 pF Reverse Transfer Capacitance NTE2508 C V = 30V, f = 1MHz 2.7 pF re CB NTE2509 4.0 pF Collector to Emitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V CE(sat) C B Base to Emitter Saturation Voltage V I = 50mA, I = 5mA 1.0 V BE(sat) C B .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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