X-On Electronics has gained recognition as a prominent supplier of NTE2522 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2522 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2522 NTE

NTE2522 electronic component of NTE
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See Product Specifications
Part No.NTE2522
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 50V; 8A; 15W; TO126
Datasheet: NTE2522 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.195 ea
Line Total: USD 63.9 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.195
50 : USD 1.9116
100 : USD 1.7604
200 : USD 1.6416
500 : USD 1.5336

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.4195
3 : USD 3.0802
7 : USD 2.2389
20 : USD 2.1168

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2522 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2522 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2522 (NPN) & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch TO251 Features: High Current Capacity High Collector Emitter Saturation Voltage TO251 Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V CBO NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector Emitter Voltage, V CEO NTE2522 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V NTE2523 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. NTE2523 is a discontinued device and no longer available. Note 2. For NTE2523, the polarity is reversed. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I CBO NTE2522 V = 45V, I = 0 1.0 A CB E NTE2523 V = 3V, I = 0 1.0 A CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h FE1 NTE2522 V = 2V, I = 500mA 140 400 CE C NTE2523 100 400 NTE2522 h V = 2V, I = 8A 40 FE2 CE C NTE2523 25 f V = 2V, I = 500mA 250 MHz Gain Bandwidth Product T CE C Rev. 810Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance C ob NTE2522 V = 10V, f = 1MHz 65 pF CB NTE2523 100 pF CollectorEmitter Saturation Voltage V CE(sat) NTE2522 I = 4A, I = 200mA 0.25 0.7 V C B NTE2523 0.3 0.8 V BaseEmitter Saturation Voltage V BE(sat) NTE2522 I = 4A, I = 200mA 0.95 1.8 V C B NTE2523 0.95 1.3 V CollectorBase Breakdown Voltage V (BR)CBO NTE2522 I = 100A, I = 0 60 V C E NTE2523 50 V CollectorEmitter Breakdown Voltage V (BR)CEO NTE2522 I = 1mA, R = 45 V C BE NTE2523 40 V Emitter Base Breakdown Voltage V I = 10A, I = 0 5 V (BR)EBO E C TurnOn Time t 50 100 ns V = 25V, V = 1V, on CC BE 20I = 20I = I = 4A, B1 B2 C Storage Time t stg Pulse Width = 20s, NTE2522 150 270 ns Duty Cucle 1%, Note 1 NTE2523 120 220 ns Turn Off Time t off NTE2522 180 350 ns NTE2523 150 300 ns Note 2. For NTE2523, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) C .059 (1.5) .275 (7.0) BC E .295 (7.5) .002(0.5) .090 (2.3)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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