NTE2524 (NPN) & NTE2525 (PNP) Silicon Complementary Transistors High Current Switch TO251 Features: Low Collector Emitter Saturation Voltage High Current and High f T Excellent Linearity of h FE Fast Switching Time TO251 Type Package Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 1.0 A EBO EB C DC Current Gain h V = 2V, I = 500mA 100 400 FE CE C V = 2V, I = 6A 35 CE C GainBandwidth Product f T NTE2524 V = 5V, I = 1A 180 MHz CE C NTE2525 130 MHz C Output Capacitance ob V = 10V, f = 1MHz 65 pF NTE2524 CB NTE2525 95 pF Rev. 810Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V CE(sat) NTE2524 I = 4A, I = 200mA 200 400 mV C B NTE2525 250 500 mV BaseEmitter Saturation Voltage V I = 4A, I = 200mA 0.95 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 50 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 10A, I = 0 6 V (BR)EBO E C TurnOn Time t 50 ns V = 25V, V = 5V, on CC BE 10I = 10I = I = 4A, B1 B2 C Storage Time t stg Pulse Width = 20s, NTE2524 500 ns Duty Cycle 1%, Note 1 NTE2525 450 ns Fall Time t 20 ns f Note 1. For NTE2525, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) BC E .295 (7.5) .002(0.5) .090 (2.3)