X-On Electronics has gained recognition as a prominent supplier of NTE255 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE255 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE255 NTE

NTE255 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE255
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 300V; 500mA; 2W; TO237
Datasheet: NTE255 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.3525 ea
Line Total: USD 67.05 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.3525
50 : USD 2.0844
100 : USD 1.8792
200 : USD 1.7496
500 : USD 1.6308

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.6772
3 : USD 3.3109
7 : USD 2.4017
18 : USD 2.2797

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE255 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE255 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE255 Silicon NPN Transistor Horizontal Driver, Amp Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850mW A D Power Dissipation (T = +25C), P max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W COLLECTOR LEAD D Maximum Operating Junction Temperature, T max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Thermal Resistance, JunctiontoCase (T = +25C), R . . . . . . . . . . . 62.5C/W COLLECTOR LEAD thJC Thermal Resistance, JunctiontoAmbient (T = +25C), R . . . . . . . . . . . . . . . . . . . . . . 147C/W A thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 300V 1.0 A CBO CB DC Current Gain h I = 50mA, V = 10V, Note 1 25 FE C CE I = 100mA, V = 10V, Note 1 30 C CE I = 250mA, V = 10V, Note 1 15 C CE I = 500mA, V = 10V, Note 1 10 50 C CE CollectorEmitter Saturation Voltage V I = 100mA, I = 10mA, Note 1 0.2 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 100mA, Note 1 0.9 1.2 V BE(sat) C B Transition Frequency f I = 50mA 30 300 MHz T C Output Capacitance C V = 10V, f = 1MHz 15 pF ob CB Input Capacitance C V = 0.5V, f = 1MHz 125 pF ib BE Note 1. Pulse Test: Pulse Width = 300 s..200 (5.08) .180 (4.57) .100 (2.54) .180 (4.57) E B C .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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