X-On Electronics has gained recognition as a prominent supplier of NTE2561 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2561 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2561 NTE

NTE2561 electronic component of NTE
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See Product Specifications
Part No.NTE2561
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 80V; 500mA; 15W; TO220
Datasheet: NTE2561 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 11.5375 ea
Line Total: USD 115.38 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 11.5375
50 : USD 8.0786
100 : USD 7.4546
200 : USD 6.9197
500 : USD 6.4629

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 14.56
2 : USD 9.492
5 : USD 8.974

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2561 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2561 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2561 Silicon NPN Transistor Video Amplifier Features: High GainBandwidth Product High Breakdown Voltage Large Current Small Reverse Transfer Capacitance Applications: WideBand Amplifiers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 5.0 A EBO EB C DC Current Gain h V = 10V, I = 50mA 30 200 FE CE C V = 10V, I = 100mA 20 CE C GainBandwidth Product f V = 10V, I = 100mA 1.2 GHz T CE C Output Capacitance C V = 30V, f = 1MHz 4.4 pF ob CB Reverse Transfer Capacitance C V = 30V, f = 1MHz 3.8 pF re CB CollectorEmitter Saturation Voltage V I = 300mA, I = 30mA 0.6 V CE(sat) C B BaseEmitter Saturation Voltage V I = 300mA, I = 30mA 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 100 A, I = 0 3 V (BR)EBO E C.420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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