NTE2561 Silicon NPN Transistor Video Amplifier Features: High GainBandwidth Product High Breakdown Voltage Large Current Small Reverse Transfer Capacitance Applications: WideBand Amplifiers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak (Pulse) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 80V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 2V, I = 0 5.0 A EBO EB C DC Current Gain h V = 10V, I = 50mA 30 200 FE CE C V = 10V, I = 100mA 20 CE C GainBandwidth Product f V = 10V, I = 100mA 1.2 GHz T CE C Output Capacitance C V = 30V, f = 1MHz 4.4 pF ob CB Reverse Transfer Capacitance C V = 30V, f = 1MHz 3.8 pF re CB CollectorEmitter Saturation Voltage V I = 300mA, I = 30mA 0.6 V CE(sat) C B BaseEmitter Saturation Voltage V I = 300mA, I = 30mA 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 100 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 100 A, I = 0 3 V (BR)EBO E C.420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab