X-On Electronics has gained recognition as a prominent supplier of NTE2563 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2563 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2563 NTE

NTE2563 electronic component of NTE
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See Product Specifications
Part No.NTE2563
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 30V; 12A; 25W; TO220FP
Datasheet: NTE2563 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.6788 ea
Line Total: USD 73.58 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.6788
50 : USD 2.3868
100 : USD 2.2032
200 : USD 2.0304
500 : USD 1.89

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 4.2471
3 : USD 3.8265
6 : USD 2.7817
16 : USD 2.6325

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2563 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2563 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch TO220 Full Pack Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 full pack type package designed for use as a high current switch. Typical application include relay drivers, high speed inverters, converters, etc. Features: Low Collector Emitter Saturation Voltage High Current Capacity Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 60V CBO CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous .................................................................. 12A Pulse ....................................................................... 20A Collector Dissipation, P C T = +25C .................................................................. 2W A T = +25C ................................................................. 25W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 200 FE CE C V = 2V, I = 6A 30 CE C Current GainBandwidth Product f V = 5V, I = 1A 120 MHz T CE C Rev. 615Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage NTE2562 V I = 5A, I = 0.25A 0.4 V CE(sat) C B NTE2563 0.5 V CollectorBase Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 30 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C TurnOn Time NTE2562 t V = 10V, V = 5V, 0.2 s on CC BE 10I = 10I = I = 5A, B1 B2 C NTE2563 0.1 s Pulse Width = 20s, Storage Time Duty Cycle = 1% NTE2562 t 0.5 s stg NTE2563 0.3 s Fall Time t 0.03 s f .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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