NTE2562 (NPN) & NTE2563 (PNP) Silicon Complementary Transistors High Current Switch TO220 Full Pack Description: The NTE2562 (NPN) and NTE2563 (PNP) are silicon complementary transistors is a TO220 full pack type package designed for use as a high current switch. Typical application include relay drivers, high speed inverters, converters, etc. Features: Low Collector Emitter Saturation Voltage High Current Capacity Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 60V CBO CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous .................................................................. 12A Pulse ....................................................................... 20A Collector Dissipation, P C T = +25C .................................................................. 2W A T = +25C ................................................................. 25W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 200 FE CE C V = 2V, I = 6A 30 CE C Current GainBandwidth Product f V = 5V, I = 1A 120 MHz T CE C Rev. 615Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage NTE2562 V I = 5A, I = 0.25A 0.4 V CE(sat) C B NTE2563 0.5 V CollectorBase Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 30 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C TurnOn Time NTE2562 t V = 10V, V = 5V, 0.2 s on CC BE 10I = 10I = I = 5A, B1 B2 C NTE2563 0.1 s Pulse Width = 20s, Storage Time Duty Cycle = 1% NTE2562 t 0.5 s stg NTE2563 0.3 s Fall Time t 0.03 s f .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated