NTE2564 (NPN) & NTE2565 (PNP) Complementary Silicon Transistors High Current Switch Features: Low Collector Emitter Saturation Voltage High Current Capacity Applications: Relay Drivers High Speed Inverters Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 280 FE CE C V = 2V, I = 4A 30 CE C GainBandwidth Product f V = 5V, I = 1A 120 MHz T CE C Collector Emitter Saturation Volt- V CE(sat) age I = 3A, I = 150mA 0.4 V C B NTE2564 NTE2565 0.5 VElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 30 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C TurnOn Time t V = 10V, V = 5V, 0.1 s on CC BE 20I = 20I = I = 4A, B1 B2 C Storage Time t stg Pulse Width = 20 s, NTE2564 0.5 s Duty Cycle Duty Cycle 1%, Note 1 1%, Note 1 NTE2565 0.2 s Fall Time t 1.6 s f Note 1. For NTE2565, the polarity is reversed. .177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)