X-On Electronics has gained recognition as a prominent supplier of NTE2564 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2564 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2564 NTE

NTE2564 electronic component of NTE
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See Product Specifications
Part No.NTE2564
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 30V; 8A; 30W; TO251
Datasheet: NTE2564 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.5054 ea
Line Total: USD 70.11 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 20
Multiples : 1
20 : USD 3.5054
50 : USD 2.184
100 : USD 1.9723
200 : USD 1.8386
500 : USD 1.716

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 3.85
3 : USD 3.472
7 : USD 2.52
18 : USD 2.38

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2564 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2564 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2564 (NPN) & NTE2565 (PNP) Complementary Silicon Transistors High Current Switch Features: Low Collector Emitter Saturation Voltage High Current Capacity Applications: Relay Drivers High Speed Inverters Converters Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 280 FE CE C V = 2V, I = 4A 30 CE C GainBandwidth Product f V = 5V, I = 1A 120 MHz T CE C Collector Emitter Saturation Volt- V CE(sat) age I = 3A, I = 150mA 0.4 V C B NTE2564 NTE2565 0.5 VElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V I = 1mA, I = 0 60 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 30 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C TurnOn Time t V = 10V, V = 5V, 0.1 s on CC BE 20I = 20I = I = 4A, B1 B2 C Storage Time t stg Pulse Width = 20 s, NTE2564 0.5 s Duty Cycle Duty Cycle 1%, Note 1 1%, Note 1 NTE2565 0.2 s Fall Time t 1.6 s f Note 1. For NTE2565, the polarity is reversed. .177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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