X-On Electronics has gained recognition as a prominent supplier of NTE2569 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2569 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2569 NTE

NTE2569 electronic component of NTE
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See Product Specifications
Part No.NTE2569
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 60V; 10A; 30W; TO220FP
Datasheet: NTE2569 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.1875 ea
Line Total: USD 31.88 
Availability - 9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 3.1875
100 : USD 2.5125
250 : USD 2.425
500 : USD 2.3625
1000 : USD 2.225
2500 : USD 2.1625
5000 : USD 2.125
7500 : USD 2.1

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2569 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2569 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2568 (NPN) & NTE2569 (PNP) Silicon Complementary Transistors High Current Switch TO220 Full Pack Features: Low Saturation Voltage Fast Switching Speed Applications: Car Use Inductance Drivers, Lamp Drivers Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits) Power Amplifiers (High Power Car Stereos, Motor Control) High Speed Switching (Switching Regulators, Drivers) Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V ....................................................... 80V CBO CollectorEmitter Voltage, V ...................................................... 60V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous .................................................................. 10A Peak ....................................................................... 12A Collector Power Dissipation, P C T = +25C ................................................................. 30W C T = +25C .................................................................. 2W A Operating Junction Temperature, T +150............................................... C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 2V, I = 1A 70 280 FE CE C Gain Bandwidth Product f V = 5V, I = 1A 100 MHz T CE C CollectorEmitter Saturation Voltage V I = 5A, I = 0.25A 0.4 V CE(sat) C B Rev. 615Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 80 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 60 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 5 V (BR)EBO E C TurnOn Time t 0.1 s I = 5A, I = 20A, on C B1 I = 20A, V = 20V, B2 CC Storage Time t 0.5 s stg Pulse Width = 20 s, Collector Current Fall Time t Duty Cycle 1% 0.1 s f .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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