X-On Electronics has gained recognition as a prominent supplier of NTE2570 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2570 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2570 NTE

NTE2570 electronic component of NTE
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See Product Specifications
Part No.NTE2570
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 80V; 7A; 30W; TO220FP
Datasheet: NTE2570 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 3.6675 ea
Line Total: USD 73.35 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 3.6675
50 : USD 2.214
100 : USD 2.0412
200 : USD 1.8792
500 : USD 1.7496

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.9351
3 : USD 3.5415
7 : USD 2.5781
17 : USD 2.4289

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2570 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2570 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2570 (NPN) & NTE2571 (PNP) Silicon Complementary Transistors High Current Switch TO220 Full Pack Features: Low Collector Emitter Saturation Voltage High Current Capacity Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ....................................................... 90V CBO CollectorEmitter Voltage, V ...................................................... 80V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous ................................................................... 7A Peak ....................................................................... 12A Collector Power Dissipation, P C T = +25C .................................................................. 2W A T = +25C ................................................................. 30W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector CutOff Current I V = 80V, I = 0 0.1 mA CBO CB E Emitter CutOff Current I V = 4V, I = 0 3.0 mA EBO EB C DC Current Gain h V = 2V, I = 1A 100 280 FE CE C V = 2V, I = 4A 30 CE C GainBandwidth Product f V = 5V, I = 1A 20 MHz T CE C CollectorEmitter Saturation Voltage V CE(sat) NTE2570 I = 5A, I = 10mA 0.4 V C B NTE2571 0.5 V CollectorBase Breakdown Voltage V I = 1mA, I = 0 90 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 80 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO C C Rev. 615Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit TurnOn Time NTE2570 t 0.1 s V = 50V, V = 5V, on CC BE 10I = 10I = I = 2A, B1 B2 C NTE2571 0.2 s Pulse Width = 20 s Storage Time Duty Cycle 1% NTE2570 t 1.6 s stg NTE2571 0.7 s Fall Time NTE2570 t 0.4 s f NTE2571 0.2 s Note 1. For NTE2571, the polarity is reversed. .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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