NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output TO220 Full Pack Features: Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 200V CBO CollectorEmitter Voltage, V ...................................................... 60V CEO EmitterBase Voltage, V .......................................................... 6V EBO Collector Current, I C Continuous ................................................................. 4.5A Peak ....................................................................... 10A Collector Dissipation (T = +25C), P ............................................... 30W C C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 40V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 mA EBO EB C DC Current Gain h V = 5V, I = 1A 30 60 FE CE C V = 5V, I = 4A 25 CE C Gain Bandwidth Product f V = 5V, I = 1A 10 MHz T CE C CollectorEmitter Saturation Voltage V I = 4A, I = 400mA 0.5 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 4A, I = 400mA 1.5 V BE(sat) C B CollectorBase Breakdown Voltage V I = 5mA, I = 0 200 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 5mA, R = 60 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 6 V (BR)EBO C C Fall Time t V = 50V, V = 5V, 0.2 0.5 s f CC BB I = 5A, I = I = 500mA, C B1 B2 PW = 20 s, Duty Cycle 2.5% Rev. 615.402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max BC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated