NTE2579 Silicon NPN Transistor High Voltage, High Speed Switch Features: Fast Switching Speed Low Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Collector Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Rqange, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 250V, I = 0 100 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 100 A EBO EB C DC Current Gain h V = 1V, I = 1A 15 FE CE C V = 1V, I = 5A 10 50 CE C GainBandwidth Product f V = 10V, I = 500mA 10 40 MHz T CE C CollectorEmitter Saturation Voltage V I = 5A, I = 500mA 0.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 500mA 1.5 V BE(sat) C B CollectorBase Breakdown Voltage V I = 1A, I = 0 400 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 200 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 6 V (BR)EBO E C Fall Time t V = 50V, I = 5A, 0.3 s f CC C I = I = 500mA, B1 B2 Pulse Width = 20 s, Duty Cycle 1%.420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)