NTE2580 Silicon NPN Transistor High Voltage, High Current Switch Features: High Breakdown Voltage, High Reliability Fast Switching Speed Wide ASO Range Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A B Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Test: Pulsed Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 400V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 800mA 20 50 FE CE C V = 5V, I = 4A 10 CE C V = 5V, I = 10mA 10 CE C GainBandwidth Product f V = 10V, I = 800mA 20 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 80 pF ob CB Collector Emitter Saturation Voltage V I = 4A, I = 800mA 0.8 V CE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Base Emitter Saturation Voltage V I = 4A, I = 800mA 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 1mA, I = 0 500 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 5mA, R = 400 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C Collector Emitter Sustaining Voltage V I = 3A, I = 0.3A, L = 1mH, 400 V CEX(sus) C B1 I = 1.2A, Clamped B2 TurnOn Time t V = 200V, I = 5A, 0.5 s on CC C I = 1A, I = 2A, B1 B2 Storage Time t 2.5 s stg RR = 40 = 40 L Fall Time t 0.3 s f .177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)