NTE2581 Silicon NPN Transistor High Speed Switching Regulator Features: High Breakdown Voltage and High Reliability Fast Switching Speed Wide ASO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 400V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 1.6A 20 40 FE CE C V = 5V, I = 8A 10 CE C V = 5V, I = 10mA 10 CE C Current GainBandwidth Product f V = 10V, I = 1.6A 20 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 160 pF ob CB CollectorEmitter Saturation Voltage V I = 8A, I = 1.6A 0.8 V CE(sat) C B BaseEmitter Saturation Voltage V I = 8A, I = 1.6A 1.5 V BE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 1mA, I = 0 500 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, R = 400 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C CollectorEmitter Sustaining Voltage V I = 6A, I = 0.6A, I = 2.4A, 400 V CEX(sus) C B1 B2 L = 500 H, Clamped TurnOn Time t 0.5 s I = 10A, I = 2A, I = 4A, on C B1 B2 R = 20 , V = 200V, Note 2 L CC Storage Time t 2.5 s stg Fall Time t 0.3 s f Note 2. Pulse Width = 20 s, Duty Cycle 1%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter .100 (2.54) Collector/Tab