X-On Electronics has gained recognition as a prominent supplier of NTE2584 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2584 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2584 NTE

NTE2584 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2584
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 500V; 5A; 50W
Datasheet: NTE2584 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 3.075 ea
Line Total: USD 30.75 
Availability - 9
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 10
Multiples : 1
10 : USD 3.075
100 : USD 2.45
250 : USD 2.375
500 : USD 2.3
1000 : USD 2.1875
2500 : USD 2.125
5000 : USD 2.0875
7500 : USD 2.05

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2584 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2584 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2584 Silicon NPN Transistor High Voltage, High Speed Switch Features: High Breakdown Voltage, High Reliability Fast Switching Speed Wide ASO Range Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A B Collector Power Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Test: Pulsed Width 300 s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 500V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 600mA 20 50 FE CE C V = 5V, I = 3A 8 CE C GainBandwidth Product f V = 10V, I = 600mA 18 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 80 pF ob CB Collector Emitter Saturation Voltage V I = 3A, I = 600mA 1.0 V CE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Base Emitter Saturation Voltage V I =3A, I = 600mA 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 1mA, I = 0 800 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 5mA, R = 500 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C Collector Emitter Sustaining Voltage V I = 5A, I = 1A, L = 50 H 500 V CO(sus) C B V I = 2.5A, I = I = 1A, 500 V CEX(sus) C B1 B2 L = 1mH, Clamped TurnOn Time t V = 200V, I = 4A, 0.5 s on CC C I = 0.8A, I = 1.6A, B1 B2 Storage Time t 3.0 s stg RR = 50 = 50 L Fall Time t 0.3 s f .177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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