NTE2585 Silicon NPN Transistor High Voltage Amplifier Features: High Breakdown Voltage Low Output Capacitance High Reliability Intended for HighDensity Mounting (Suitable for Sets Whose Height is Restricted) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO Emitter Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 1 A EBO EB C DC Current Gain h V = 5V, I = 2mA 20 50 FE CE C V = 5V, I = 10mA 10 CE C GainBandwidth Product f V = 10V, I = 2mA 40 MHz T CE C Output Capacitance C V = 100V, f = 1MHz 1.6 pF ob CB Collector Emitter Saturation Voltage V I = 10mA, I = 2mA 1.0 V CE(sat) C B Base Emitter Saturation Voltage V I = 10mA, I = 2mA 1.5 V BE(sat) C B Collector Base Breakdown Voltage V I = 100 A, I = 0 800 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 1mA, R = 800 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 100 A, I = 0 7 V (BR)EBO E C.177 (4.5) .402 (10.2) .035 (0.9) .051 (1.3) .346 (8.8) BC E .433 (11.0) .019 (0.5) .100 (2.54)