NTE2594 Silicon NPN Transistor High Voltage, High Current Switch Features: High Breakdown Voltage, High Reliability Fast Switching Speed Wide ASO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Pulsed (PW 300 s, Duty Cycle 10%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A B Collector Dissipation, P C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W A T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 500V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 1.2A 15 50 FE CE C V = 5V, I = 6A 8 CE C Gain Bandwidth Product f V = 10V, I = 1.2A 18 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 160 pF ob CB CollectorEmitter Saturation Voltage V I = 6A, I = 1.2A 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 6A, I = 1.2A 1.5 V BE(sat) C B CollectorBase Breakdown Voltage V I = 1mA, I = 0 800 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 5mA, R = 500 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Sustaining Voltage V I = 5A, I = I = 2A, L = 500 H, 500 V CEX(sus) C B1 B2 Clamped TurnOn Time t 5I = 2.5I = I = 7A, 0.5 s on B1 B2 C V = 200V, R = 28.6 CC L Storage Time t 3.0 s stg Fall Time t 0.3 s f .221 (5.6) .134 (3.4) Dia .123 (3.1) .630 (16.0) .315 C (8.0) .866 (22.0) BC E .158 (4.0) .804 (20.4) .215 (5.45) .040 (1.0)