NTE2598 Silicon NPN Transistor High Voltage, High Current Switch TO3PBL Type Package Features: High Breakdown Voltage, Reliability fast Switching Speed Wide ASO Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Base Current. I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 800V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C DC Current Gain h V = 5V, I = 1.6A 15 40 FE CE C V = 5V, I = 8A 8 CE C GainBandwidth Product f V = 10V, I = 1.6A 15 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 470 pF ob CB Collector Emitter Saturation Voltage V I = 12A, I = 2.4A 2.0 V CE(sat) C B Base Emitter Saturation Voltage V I = 12A, I = 2.4A 1.5 V BE(sat) C BElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V I = 1mA, I = 0 1100 V (BR)CBO C E Collector Emitter Breakdown Voltage V I = 10A, R = 800 V (BR)CEO C BE Emitter Base Breakdown Voltage V I = 1mA, I = 0 7 V (BR)EBO E C Collector Emitter Sustaining Voltage V I = 12A, I = I = 2.4A, 800 V CEO(sus) C B1 B2 l = 50H, Clamped TurnOn Time t 0.5 s V = 400V, on CC = I 5I = 2.5I = 20A, B1 B2 C Storage Time t 3.0 s stg R = 20 L Fall Time t 0.3 s f .810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BCE Note: Collector connected to heat sink.