NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: V = 120V (Min) CEO Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA E Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 6V, I = 2mA 350 700 FE CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B Current GainBandwidth Product f V = 6V, I = 1mA 100 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 3.0 pF ob CB E Noise NF V = 6V, I = 0.1mA, f = 1kHz, 1.0 10 dB CE C r = 10k g.165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max