X-On Electronics has gained recognition as a prominent supplier of NTE26 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE26 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE26 NTE

NTE26 electronic component of NTE
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See Product Specifications
Part No.NTE26
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 120V; 100mA; 200mW; TO237
Datasheet: NTE26 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.5813 ea
Line Total: USD 15.81 
Availability - 9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 10
Multiples : 1
10 : USD 1.5813
25 : USD 1.4375
250 : USD 1.1413
500 : USD 1.0737
1000 : USD 1.0438
2500 : USD 1
5000 : USD 0.975
7500 : USD 0.9587

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE26 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE26 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE26 Silicon NPN Transistor Low Noise Audio Amplifier Features: V = 120V (Min) CEO Low Noise: = 1dB (Typ), 10dB (Max) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA E Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C J Storage Temperature Range, T 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 6V, I = 2mA 350 700 FE CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 0.3 V CE(sat) C B Current GainBandwidth Product f V = 6V, I = 1mA 100 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 3.0 pF ob CB E Noise NF V = 6V, I = 0.1mA, f = 1kHz, 1.0 10 dB CE C r = 10k g.165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max EC B .035 (0.9) .050 (1.27) .050 (1.27) .102 (2.6) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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