NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastic full pack envelope designed for use in horizontal deflection circuits of color TV receivers. Absolute Maximum Ratings: Collector Emitter Voltage Peak Value (V = 0V), V .............................. 1700V BE CESM Collector Emitter Voltage (OpenBase), V ......................................... 825V CEO Collector Current, I C DC ......................................................................... 12A Peak Value .................................................................. 30A Base Current, I B DC ......................................................................... 12A Peak Value .................................................................. 20A Reverse Base Current (Average over any 20ms period), I ....................... 200mA B(AV) Reverse Base Current Peak Value (Note 1), I ....................................... 9A BM Total Power Dissipation (T +25C), P ........................................... 45W HS tot Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5k), V ........ 10kV C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Maximum Thermal Resistance, Junction toHeatsink, R thJHS Without Heatsink Compound ............................................... 3.7K/W With Heatsink Compound .................................................. 2.8K/W Typical Thermal Resistance, Junction toAmbient (In Free Air), R .................. 35K/W thJA Note 1. Turnoff current.Electrical Characteristics: (T = +25C unless otherwise specified) HS Parameter Symbol Test Conditions Min Typ Max Unit Isolation Limiting Value and Characteristic Repetitive Peak Voltage from All Three V R.H. 65% Clean and Dustfree 2500 V isol Terminals to External Heatsink Capacitance from T2 to External C f = 1MHz 22 pF isol Heatsink Static Characteristics Collector Cutoff Current I V = 1700V, V = 0 1.0 mA CES CE BE V = 1700V, V = 0, T = +125C 2.0 mA CE BE J Emitter Cutoff Current I V = 7.5V, I = 0A 1.0 mA EBO EB C EmitterBase Breakdown Voltage V I = 1mA 7.5 13.5 V (BR)EBO B CollectorEmitter Sustaining Voltage V I = 0A, I = 100mA, L = 25mH 825 V CEO(sus) B C CollectorEmitter Saturation Voltage V I = 7A, I = 1.75A 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 7A, I = 1.75A 1.1 V BE(sat) C B DC Current Gain h V = 5V, I = 0.1A 22 FE CE C V = 1V, I = 7A 4.0 6.0 6.5 CE C Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit) Turn Off Storage Time t 5.8 6.5 s I = 7A, L = 650H, C = 18nF, s C(sat) C fb V = 162V, I = 1.5A, CC B(end) Turn Off Fall Time t 0.6 0.8 s f L = 2H, V = 4V B BB Note 2. Measured with half sinewave voltage (curve tracer). .228 (5.8) Max .630 (16.0) Max .118 (3.0) .177 Isol (4.5) 1.063 (27.0) .885 Max (22.5) Max B C E .712 (18.1) Min .215 (5.45) .215 (5.45)