X-On Electronics has gained recognition as a prominent supplier of NTE2639 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2639 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2639 NTE

NTE2639 electronic component of NTE
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See Product Specifications
Part No.NTE2639
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 825V; 12A; 45W; SOT399
Datasheet: NTE2639 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 18.575 ea
Line Total: USD 92.88 
Availability - 5
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
5
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 18.575
25 : USD 15.4125
50 : USD 15.175
100 : USD 14.525
250 : USD 13.725
500 : USD 13.35
1000 : USD 13.0125

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
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We are delighted to provide the NTE2639 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2639 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2639 Silicon NPN Transistor CRT Horizontal Deflection, High Voltage, High Speed Switch Description: The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastic full pack envelope designed for use in horizontal deflection circuits of color TV receivers. Absolute Maximum Ratings: Collector Emitter Voltage Peak Value (V = 0V), V .............................. 1700V BE CESM Collector Emitter Voltage (OpenBase), V ......................................... 825V CEO Collector Current, I C DC ......................................................................... 12A Peak Value .................................................................. 30A Base Current, I B DC ......................................................................... 12A Peak Value .................................................................. 20A Reverse Base Current (Average over any 20ms period), I ....................... 200mA B(AV) Reverse Base Current Peak Value (Note 1), I ....................................... 9A BM Total Power Dissipation (T +25C), P ........................................... 45W HS tot Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5k), V ........ 10kV C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 65 to +150C stg Maximum Thermal Resistance, Junction toHeatsink, R thJHS Without Heatsink Compound ............................................... 3.7K/W With Heatsink Compound .................................................. 2.8K/W Typical Thermal Resistance, Junction toAmbient (In Free Air), R .................. 35K/W thJA Note 1. Turnoff current.Electrical Characteristics: (T = +25C unless otherwise specified) HS Parameter Symbol Test Conditions Min Typ Max Unit Isolation Limiting Value and Characteristic Repetitive Peak Voltage from All Three V R.H. 65% Clean and Dustfree 2500 V isol Terminals to External Heatsink Capacitance from T2 to External C f = 1MHz 22 pF isol Heatsink Static Characteristics Collector Cutoff Current I V = 1700V, V = 0 1.0 mA CES CE BE V = 1700V, V = 0, T = +125C 2.0 mA CE BE J Emitter Cutoff Current I V = 7.5V, I = 0A 1.0 mA EBO EB C EmitterBase Breakdown Voltage V I = 1mA 7.5 13.5 V (BR)EBO B CollectorEmitter Sustaining Voltage V I = 0A, I = 100mA, L = 25mH 825 V CEO(sus) B C CollectorEmitter Saturation Voltage V I = 7A, I = 1.75A 1.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 7A, I = 1.75A 1.1 V BE(sat) C B DC Current Gain h V = 5V, I = 0.1A 22 FE CE C V = 1V, I = 7A 4.0 6.0 6.5 CE C Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit) Turn Off Storage Time t 5.8 6.5 s I = 7A, L = 650H, C = 18nF, s C(sat) C fb V = 162V, I = 1.5A, CC B(end) Turn Off Fall Time t 0.6 0.8 s f L = 2H, V = 4V B BB Note 2. Measured with half sinewave voltage (curve tracer). .228 (5.8) Max .630 (16.0) Max .118 (3.0) .177 Isol (4.5) 1.063 (27.0) .885 Max (22.5) Max B C E .712 (18.1) Min .215 (5.45) .215 (5.45)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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