NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV TO3PBL Type Package Features: High Speed: t = 0.15s Typ f High Breakdown Voltage: V = 1700V CBO Low Saturation Voltage: V = 3V Max CE(sat) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectortoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V CBO Collector toEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V CEO EmittertoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A B Collector Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1700V, I = 0 1.0 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 10 A EBO EB C Collector Emitter Breakdown Voltage V I = 10mA, I = 0 600 V (BR)CEO C B DC Current Gain h V = 5V, I = 2A 10 30 FE CE C V = 5V, I = 11A 4.5 8.5 CE C Collector Emitter Saturation Voltage V I = 11A, I = 2.75A 3 V CE(sat) C B Base Emitter Saturation Voltage V I = 11A, I = 2.75A 1.0 1.3 V BE(sat) C B Transition Frequency f V = 10V, I = 0.1A 1.7 MHz T CE E Collector Output capacitance C V = 10V, I = 0, f = 1MHz 290 pF ob CB E Storage Time t I (peak) = 10A, I = 1.8A, 2.5 4.0 s stg C B1 f = 64kHz H Fall Time t 0.15 0.3 s f.810 (20.57) Max .204 (5.2) .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BC E NOTE: Pin2 connected to heatsink