X-On Electronics has gained recognition as a prominent supplier of NTE2664 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2664 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2664 NTE

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Part No.	NTE2664
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: PNP; bipolar; 230V; 15A; 130W; TO3P
Datasheet:	NTE2664 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.357 ea
Line Total: USD 6.36

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NTE2664 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 29 Jul to Fri. 02 Aug MOQ : 10 Multiples : 1	10 : USD 6.7321 50 : USD 4.0114 100 : USD 3.6994 200 : USD 3.4431 500 : USD 3.2091

0 Ship by Mon. 29 Jul to Fri. 02 Aug MOQ : 1 Multiples : 1	1 : USD 6.357 3 : USD 5.72 4 : USD 4.901 9 : USD 4.628 25 : USD 4.55

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To3p To3p
Type Of Transistor Pnp Pnp
Collector-Emitter Voltage 230 V 230 V
Collector Current 15 A 15 A
Power Dissipation 130 W 130 W
Current Gain 35 To 160 35 To 160
Frequency 30 MHz 30 MHz

We are delighted to provide the NTE2664 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2664 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2654 (NPN) & NTE2664 (PNP) Silicon Complementary Transistors Audio Power Amp Output Features: High Collector Breakdown Voltage Suitable for use in 80W High Fidelity Audio Amplifier Output Stage Absolute Maximum Ratings: (T = +25 C unles otherwise specified) C Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V CBO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A B Collector Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W C C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Electrical Characteristics: (T = +25 C unles otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut-Off Current I V = 230V, I = 0 - - 5.0 A CBO CB Emitter Cut-Off Current I V = 5V, I = 0 - - 5.0 A EBO EB C Collector-Emitter Breakdown Voltage V I = 50mA, I = 0 230 - - V (BR)CEO C B DC Current Gain NTE2654 h V = 5V, I = 1A 80 - 160 FE CE C NTE2664 55 - 160 Both Devices V = 5V, I = 7A 35 60 - CE C Collector-Emitter Saturation Voltage NTE2654 V I = 8A, I = 0.8A - 0.4 3.0 V CE(sat) C B NTE2664 - 1.5 3.0 V Base-Emitter Voltage V V = 5V, I = 7A - 1.0 1.5 V BE CE C Transition Frequency f V = 5V, I = 1A - 30 - MHz T CE C Collector Output Capacitance NTE2654 C V = 10V, I = 0, f = 1MHz - 200 - pF ob CB E NTE2664 - 360 - pF.615 (15.62) .190 (4.82) .787 (20.0) .591 .126 (3.22) (15.02) Dia .787 (20.0) BC E .215 (5.47)

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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