X-On Electronics has gained recognition as a prominent supplier of NTE2665 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2665 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2665 NTE

NTE2665 electronic component of NTE
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See Product Specifications
Part No.NTE2665
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 800V; 28A; 220W
Datasheet: NTE2665 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 25.1375 ea
Line Total: USD 125.69 
Availability - 9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 25.1375
25 : USD 20.8125
50 : USD 20.5
100 : USD 19.3
250 : USD 18.5125
500 : USD 18.0125
1000 : USD 17.5375

1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 21.294
3 : USD 20.132

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2665 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2665 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2665 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV Features: High Voltage: V = 1700V CBO Low Saturation Voltage: V = 3V Max CE(sat) High Speed: t = 0.1 s Typ f Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V CBO Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V CEO Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A B Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150 C stg Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reli ability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. Electrical Chracteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1700V, I = 0 - - 1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 - - 100 A EBO EB C Collector-Emitter Breakdown Voltage V I = 10mA, I = 0 800 - - V (BR)CEO C B DC Current Gain h V = 5V, I = 2A 22 - 48 FE CE C V = 5V, I = 8A 12.5 - 25.0 CE C V = 5V, I = 22A 4.5 - 7.5 CE C Collector-Emitter Saturation Voltage V I = 22A, I = 5.5A - - 3 V CE(sat) C B Base-Emitter Saturation Voltage V I = 22A, I = 5.5A - 1.0 1.5 V BE(sat) C B Transition Frequency f V = 10V, I = 100mA - 2 - MHz T CE C Collector Outptut Capacitance C V = 10V, I = 0, f = 1MHz - 470 - pF ob CB EElectrical Chracteristics (Cont d): (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Switching Time Storage Time t - 2.6 3.0 s I = 10A, I (end) = 1.4A, stg CP B1 f = 64kHz H Fall Time t - 0.2 0.3 s f Storage Time t I = 8A, I (end) = 1.2A, - 1.4 1.6 s stg CP B1 f = 130kHz H Fall Time t - 0.10 0.15 s f .807(20.5) Max .205 (5.2) Max .236 (6.0) 1.024 (26.0) .130 (3.3) Dia .098 (2.5) .787 (20.0) .215 (5.45) .039(1.0) .023 (0.6) BC E Note: Pin2 connected to heat sink

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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