X-On Electronics has gained recognition as a prominent supplier of NTE2666 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2666 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2666 NTE

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See Product Specifications

Part No.	NTE2666
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; 250V; 8A; 50W; TO220
Datasheet:	NTE2666 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

20: USD 3.2897 ea
Line Total: USD 65.79

Availability - 0

MOQ: 20 Multiples: 1
Pack Size: 1

NTE2666 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 17 Jan to Thu. 23 Jan MOQ : 20 Multiples : 1	20 : USD 3.2897 50 : USD 1.9555 100 : USD 1.7672 200 : USD 1.6418 500 : USD 1.5268

0 Ship by Wed. 15 Jan to Fri. 17 Jan MOQ : 1 Multiples : 1	1 : USD 3.416 3 : USD 3.0744 7 : USD 2.2335 19 : USD 2.1153

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To220 To220
Type Of Transistor Npn Npn
Collector-Emitter Voltage 250 V 250 V
Collector Current 8 A 8 A
Power Dissipation 50 W 50 W

We are delighted to provide the NTE2666 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2666 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: DC Current Gain Specified to 5 Amperes Collector-Emitter Sustaining Voltage High Current Gain - Bandwidth Product Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V CEO Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V CB Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A B Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W C D Derate Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W/ C Total Power Dissipation (T = +25 C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W A D Derate Above +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .016W/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150 C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Sustaining Voltage V I = 10mA, I = 0, Note 1 250 - - V CEO(sus) C B Collector Cutoff Current I V = 250V, I = 0 - - 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 - - 10 A EBO EB C ON Characteristics (Note 1) DC Current Gain h I = 0.5A, V = 5V 70 - - - FE C CE I = 1A, V = 5V 50 - - - C CE I = 2A, V = 5V 10 - - - C CE Collector-Emitter Saturation Voltage V I = 1A, I = 0.1A - - 0.5 V CE(sat) C B Base-Emitter On Voltage V I = 1A, V = 5V - - 1.0 V BE(on) C CE Dynamic Characteristics: (f = h f ) T fe test Current Gain-Bandwidth Product f I = 500mA, V = 10V, 30 - - MHz T C CE f = 1MHz test Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%..420 (10.67) Max .110 (2.79) Tab .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .100 (2.54) Base Emitter Collector/Tab .070 (1.78) Max

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE ELECTRONICS may also be referenced as

NTE ELECTRONICS, INC.

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