NTE2669 NTE

NTE2669 Silicon NPN Transistor Horizontal Deflection High Speed Switch TO3P Full Pack Description: The NTE2669 is a Horizontal Deflection Output for High Resolution DisplayColor TVs in High Speed Switching Applications. Features: High Voltage Low Saturation Voltage High Speed Built in Dampter Type Collector Metal (Fin) is Fully Covered with Mold Resin Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ..................................................... 1700V CBO Collector Emitter Voltage, V ..................................................... 700V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous .................................................................. 10A Pulse ....................................................................... 20A Base Current, I .................................................................... 5A B Collector Power Dissipation, P ..................................................... 50W C Junction Temperature, T ......................................................... +150C j Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 1700V, I = 0 1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 83 250 mA EBO EB C EmitterBase Breakdown Voltage V I = 400mA, I = 0 5 V EBO E C V = 5V, I 1A 8 25 DC Current Gain h CE C FE V = 5V, I 6A 4 8.5 CE C Rev. 311Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Saturation Voltage V I = 6A, I = 1.5A 3 V CE (sat) C B BaseEmitter Saturation Voltage V I = 6A, I = 1.5A .9 1.2 V BE (sat) C B Forward Voltage (Damper Diode) V I = 6A 1.45 1.8 V F F Transition Frequency f V = 10V, I 0.1A 2 MHz T CE E Collector Output Capacitance Cob V = 10V, I 0, f = 1MHz 185 pF CB E Switching, Storage Time t I = 5A, I (end) = 1A, 4 6 stg CP B1 f = 31.5kHz s H Switching, Fall Time t 0.2 0.5 f .217 (5.5) .118 (3.0) .610 (15.5) .177 Isol (4.5) .441 (11.2) .965 .906 (24.5) (23.0) B C E 1.709 .079 (43.4) (2.0) Max .429 (10.9)