NTE2670 NTE

NTE2670 (NPN) & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output TO3PBL Type Package Description: The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that utilize Perforated Emitter technology specifically designed for high power audio output, disk head po- sitioners and linear applications. Features: High DC Current Gain h = 25 Min I = 8A FE C Excellent Gain Linearity Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V CEO Collector Emitter Voltage (1.5V), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V CEX EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W thJC Note 1. Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%. Note 2. Matched complementary pairs are available upon request (NTE2671MCP). Matched com- plementary pairs have their gain specification (h ) matched to within 10% of each other. FE Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Emitter Sustaining Voltage V I = 100mA, I = 0 250 V CEO(sus) C B Collector Cutoff Current I V = 200V, I = 0 100 A CEO CE B I V = 250V, V = 1.5V 100 A CEX CE BE(off) Emitter Cutoff Current I V = 5V, I = 0 100 A EBO CE CElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Second Breakdown Second Breakdown Collector Current I V = 50V, t = 1s (nonrepetitive) 4.0 A S/b CE with Base Forward Biased V = 80V, t = 1s (nonrepetitive) 2.25 A CE ON Characteristics DC Current Gain h I = 8A, V = 5V 25 75 FE C CE I = 16A, V = 5V 8 C CE BaseEmitter Voltage V I = 8A, V = 5V 2.2 V BE(on) C CE CollectorEmitter Saturation Voltage V I = 8A, I = 800mA 1.4 V CE(sat) C B I = 16A, I = 3.2A 4.0 V C B Dynamic Characteristics Total Harmonic Distortion at the Output (h unmatched) THD V = 28.3V, f = 1kHz, P = 100W 0.8 % FE RMS LOAD RMS (h matched) Matched pair h = 50 5A/5V 0.08 % FE FE Current Gain Bandwidth Product f I = 1A, V = 1V, f = 1MHz 4 MHz T C CE test Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 500 pF ob CB E test .810(20.57) .204 (5.2) Max .236 (6.0) 1.030 (26.16) .137 (3.5) Dia Max .098 .787 (2.5) (20.0) .215 (5.45) .040 (1.0) .023 (0.6) BCE Note: Collector connected to heat sink.