NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: High DC Current Gain: h = 800 to 3200 FE Low Collector Emitter Saturation Voltage: V = 0.5V Max CE(sat) High Collector Base Voltage: V 15V EBO Applications: Low Frequency, General Purpose Amp Various Drivers Muting Circuit Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmitterBase Voltge, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA B Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector CutOff Current I V = 40V, I = 0 0.1 A CBO CB E Emitter CutOff Current I V = 10V, I = 0 0.1 A EBO EB C DC Current Gain h V = 5V, I = 10mA 800 1500 3200 FE CE C V = 5V, I = 100mA 600 CE C GainBandwidth Product f V = 10V, I = 10mA 250 MHz T CE C Common Base Output Capacitance c V = 10V, f = 1MHz 4.0 pF ob CB CollectorEmitter Saturation Voltage V I = 100mA, I = 2mA 0.12 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 100mA, I = 2mA 0.85 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 60 V (BR)CBO C C CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 50 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10A, I = 0 15 V (BR)EBO E C.135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max