NTE2678 Silicon NPN Transistor Power, High Voltage w/BuiltIn Damper Diode TO3P(H)IS Type Package Features: Built In Damper Diode High Voltage, High Speed Applications: Color TV Horizontal Output Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage (Open Emitter), V ........................................ 1700V CBO CollectorEmitter Voltage (Open Base), V ......................................... 600V CEO EmitterBase Voltage (Open Collector), V ........................................... 5V EBO Collector Current, I C Continuous ................................................................... 6A Peak ....................................................................... 12A Base Current, I .................................................................... 3A B Collector Power Dissipation (T = +25C), P ......................................... 50W C C Operating Junction Temperature, T ............................................... +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit EmitterBase Breakdown Voltage V I = 200mA, I = 0 5 V (BR)EBO E C CollectorEmitter Saturation Voltage V I = 5A, I = 1A 5.0 V CE(sat) C B BaseEmitter Saturation Voltage V I = 5A, I = 1A 1.5 V BE(sat) C B Collector Cutoff Current I V = 500V, I = 0 10 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 66 200 mA EBO EB C DC Current Gain h I = 1A, V = 5V 8 28 FE C CE Transition Frequency f I = 100mA, V = 10V 1 3 MHz T C CE Collector Output Capacitance C I = 0, V = 10V, f = 1MHz 250 pF OB E CB Diode Forward Voltage V I = 5A 2.0 V F F Storage Time t Resistive Load, I = 5A, I = 1A, 6.0 s s CP B1 I = 2A, R = 40 B2 L Fall Time t 0.4 s f.217 (5.5) .610 (15.5) .130 (3.3) .177 (4.5) .378 (9.6) .965 (24.5) .177 (4.5) .720 (18.3) Min BC E .215 (5.47) .138 (3.5)