NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V CBE EmitterBase Voltage, V EBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Device Dissipation T = +25C, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW A D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation T = +25C, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W C D Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/mW thJA Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/mW thJC Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0, Note 1 300 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 100 A, I = 0 300 V (BR)CBO C E EmitterBase Breakdown Voltage V (BR)EBO NTE287 I = 100 A, I = 0 6 V E C NTE288 5 V Collector Cutoff Current I CBO NTE287 V = 200V, I = 0 0.1 A CB E NTE288 0.25 A Emitter Cutoff Current I EBO NTE287 V = 6V, I = 0 0.1 A EB C NTE288 V = 3V, I = 0 0.1 A EB C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h FE NTE287 & NTE288 I = 1mA, V = 10V 25 C CE I = 10mA, V = 10V 40 C CE NTE287 I = 30mA, V = 10V 40 C CE NTE288 25 CollectorEmitter Saturation Voltage V I = 20mA, I = 2mA 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 20mA, I = 2mA 0.9 V BE(sat) C B SmallSignal Characteristics Current Gain Bandwidth Product f I = 10mA, V = 20V, f = 100MHz 50 MHz T C CE CollectorBase Capacitance C cb NTE287 V = 20V, I = 0, f = 1MHz 3 pF CB E NTE288 6 pF Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max