X-On Electronics has gained recognition as a prominent supplier of NTE289 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE289 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE289 NTE

NTE289 electronic component of NTE
Images are for reference only
See Product Specifications
Part No. NTE289
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 30V; 800mA; 600mW; TO92
Datasheet: NTE289 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
33: USD 2.2935 ea
Line Total: USD 75.69 
Availability - 1
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 13 Mar to Wed. 19 Mar
MOQ : 33
Multiples : 1
33 : USD 2.2935
36 : USD 1.8765
250 : USD 1.3875
500 : USD 1.3
1000 : USD 1.2625
2500 : USD 1.215
5000 : USD 1.1838
7500 : USD 1.165

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE289 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE289 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: 1W Audio Power Amplifier Applications Switching Applications Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA C Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA E Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 30 V (BR)CEO C B Collector Cutoff Current I V = 35V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 2V, I = 50mA, Note 2 120 240 FE (1) CE C h V = 2V, I = 500mA, Note 2 35 FE (2) CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 20mA, Note 2 0.8 V CE(sat) C B BaseEmitter Voltage V V = 2V, I = 500mA, Note 2 1.1 V BE CE C CurrentGain Bandwidth Product f V = 10V, I = 10mA 140 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 22 30 pF ob CB E Switching Time TurnOn t V = 10V, V = 3V, 50 ns on CC BB Duty Cycle 2% Storage t 400 ns stg Fall t 40 ns f Note 1. NTE289MP is a matched pair of NTE289 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%..135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max .122 (3.09) Max .200 (5.08) Max .255 (6.48) Max E C B .492 (12.5 Min .017 (0.45) Dia. .027 (0.68) Dia. .059 (1.5) .059 (1.5)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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