X-On Electronics has gained recognition as a prominent supplier of NTE289MP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE289MP Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE289MP NTE

NTE289MP electronic component of NTE
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See Product Specifications
Part No.NTE289MP
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 30V 0.8A 3-Pin
Datasheet: NTE289MP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 2.6764 ea
Line Total: USD 80.29 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Tue. 07 Jan
MOQ : 30
Multiples : 1
30 : USD 2.6764
50 : USD 1.7678
100 : USD 1.5152
200 : USD 1.4164
500 : USD 1.3176

0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 3.1458
3 : USD 2.8371
8 : USD 2.058
20 : USD 1.9551

   
Manufacturer
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We are delighted to provide the NTE289MP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE289MP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Applications: 1W Audio Power Amplifier Applications Switching Applications Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . 35V CBO CollectorEmitter Voltage, V 30V CEO EmitterBase Voltage, V 5V EBO Collector Current, I . 800mA C Emitter Current, I . 800mA E Collector Power Dissipation, P 600mW C Operating Junction Temperature, T . +150C J Storage Temperature Range, T 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 30 V (BR)CEO C B Collector Cutoff Current I V = 35V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 5V, I = 0 0.1 A EBO EB C DC Current Gain h V = 2V, I = 50mA, Note 2 120 240 FE (1) CE C h V = 2V, I = 500mA, Note 2 35 FE (2) CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 20mA, Note 2 0.8 V CE(sat) C B BaseEmitter Voltage V V = 2V, I = 500mA, Note 2 1.1 V BE CE C CurrentGain Bandwidth Product f V = 10V, I = 10mA 140 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 22 30 pF ob CB E Switching Time TurnOn t V = 10V, V = 3V, 50 ns on CC BB Duty Cycle 2% Storage t 400 ns stg Fall t 40 ns f Note 1. NTE289MP is a matched pair of NTE289 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%..135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max .122 (3.09) Max .200 (5.08) Max .255 (6.48) Max E C B .492 (12.5 Min .017 (0.45) Dia027 (0.68) Dia059 (1.5) .059 (1.5)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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