X-On Electronics has gained recognition as a prominent supplier of NTE30 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE30 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE30 NTE

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Part No.	NTE30
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: PNP; bipolar; 80V; 50A; 300W; TO3
Datasheet:	NTE30 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3: USD 25.9536 ea
Line Total: USD 77.86

Availability - 0

MOQ: 3 Multiples: 1
Pack Size: 1

NTE30 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 14 Nov to Wed. 20 Nov MOQ : 3 Multiples : 1	3 : USD 25.9536 50 : USD 16.7143 100 : USD 15.4329 200 : USD 14.3297 500 : USD 13.3714

0 Ship by Thu. 14 Nov to Wed. 20 Nov MOQ : 1 Multiples : 1	1 : USD 19.642 3 : USD 18.564

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Polarisation Bipolar Bipolar
Mounting Tht Tht
Case To3 To3
Type Of Transistor Pnp Pnp
Collector-Emitter Voltage 80 V 80 V
Collector Current 50 A 50 A
Power Dissipation 300 W 300 W
Current Gain 5 To 60 5 To 60

We are delighted to provide the NTE30 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE30 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: High Current Capability: I = 50A (Continuous) C DC Current Gain: h = 15 to 60 I = 25A FE C Low Collector-Emitter Saturation Voltage: V = 1V Max I = 25A CE(sat) C Absolute Maximum Ratings: Collector-Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO Collector-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB Emitter-Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A B Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.715W/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C stg Thermal Resistance, Junction-to-Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.584 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector-Emitter Sustaining Voltage V I = 0.2A, I = 0, Note 1 80 - - V CEO(sus) C B Collector Cutoff Current I V = 40V, I = 0 - - 1 mA CEO CE B I V = 80V, V = 1.5V - - 2 mA CEX CE EB(off) V = 80V, V = 1.5V, - - 10 mA CE EB(off) T = +150C C I V = 80V, I = 0 - - 2 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 - - 5 mA EBO BE CElectrical Characteristics (Cont d): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 25A, V = 2V 15 - 60 FE C CE I = 50A, V = 5V 5 - - C CE Collector-Emitter Saturation Voltage V I = 25A, I = 2.5A - - 1 V CE(sat) C B I = 50A, I = 10A - - 5 V C B Base-Emitter Saturation Voltage V I = 25A, I = 2.5A - - 2 V BE(sat) C B Base-Emitter ON Voltage V I = 25A, V = 2V - - 2 V BE(on) C CE Dynamic Characteristics Current Gain-Bandwidth Product f I = 5A, V = 10V, f = 1MHz 2 - - MHz T C CE Output Capacitance C V = 10V, I = 0, f = 0.1MHz - - 1200 pF ob CB E Small-Signal Current Gain h I = 10A, V = 5V, f = 1kHz 15 - - fe C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .063 (1.6) Max Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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