X-On Electronics has gained recognition as a prominent supplier of NTE31 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE31 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE31 NTE

NTE31 electronic component of NTE
NTE31 NTE
NTE31 Bipolar Transistors - BJT
NTE31  Semiconductors

Images are for reference only
See Product Specifications
Part No. NTE31
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 160V 1A 3-Pin TO-92
Datasheet: NTE31 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
21: USD 3.0388 ea
Line Total: USD 63.81 
Availability - 19
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ: 21  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 21
Multiples : 1
21 : USD 3.0388
25 : USD 2.7625
100 : USD 2.3375
250 : USD 2.2
500 : USD 2.075
1000 : USD 1.9875
2500 : USD 1.925
5000 : USD 1.8875

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE31 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE31 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE31 (NPN) & NTE32 (PNP) Silicon Complementary Transistors TV Sound Output, TV Vertical Output, AF Driver Output Features: High Voltage: V = 160V CEO High Continuous Collector Current Capability Applications: Vertical Deflection Output & Sound Output Applications for Line Operated TV Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Current, I C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 160 V (BR)CEO C B Collector Cutoff Current I V = 150V, I = 0 1.0 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 1.0 A EBO EB C DC Current Gain h V = 5V, I = 200mA 100 200 FE CE C CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA 1.5 V CE(sat) C B BaseEmitter Voltage V V = 5V, I = 5mA 0.45 0.75 V BE CE C Transition Frequency NTE31 f V = 5V, I = 200mA 20 100 MHz T CE C NTE32 15 50 MHz Collector Output Capacitance NTE31 C V = 10V, I = 0, f = 1MHz 20 pF ob CB E NTE32 35 pF.339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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