X-On Electronics has gained recognition as a prominent supplier of NTE313 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE313 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE313 NTE

NTE313 electronic component of NTE
Images are for reference only
See Product Specifications
Part No. NTE313
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 30V; 20mA; 150mW
Datasheet: NTE313 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 2.3638 ea
Line Total: USD 70.91 
Availability - 0
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 02 Jan to Wed. 08 Jan
MOQ : 30
Multiples : 1
30 : USD 2.3638
50 : USD 1.7464
100 : USD 1.2444
200 : USD 1.1503
500 : USD 1.0666

0
Ship by Tue. 31 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.4043
3 : USD 2.1547
10 : USD 1.5766
27 : USD 1.4846

   
Manufacturer
Product Category
Polarisation
Mounting
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE313 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE313 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA C Total Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW T Maximum Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.2 A CBO CB E DC Current Gain h V = 10V, I = 2mA 20 60 200 FE CE C CurrentGain Bandwidth Product f V = 10V, I = 2mA 400 530 MHz T CE E Output Capacitance C V = 10V, I = 0, f = 1MHz 0.5 1.0 pF ob CB E Noise Figure NF I = 2mA, f = 200MHz 2.5 3.3 dB E Power Gain PG I = 2mA, f = 200MHz 20 23 dB E AGC Current I PG = 30dB 9 11 mA AGC.157 (4.0) Base Emitter Collector .026 (0.66) .079 (2.02) Max .008 (0.20) .150 (3.81) Dia Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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