NTE314 Silicon Controlled Rectifier (SCR) Power Regulator Switch Description: The NTE314 is a silicon controlled rectifier (SCR) in a TO3 type package designed for 12.5 Ampere RMS, 400 Volt power supply and computer control applications to +100C maximum junction. Features: Low Forward ON Voltage All Diffused Junctions for Greater Parameter Uniformity Glass Passivated for Greater Stability Absolute Maximum Ratings: Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), V , V . . . . . . . . . . . . 400V DRM RRM RMS Forward Current (T = +80C, All Conduction Angles), I . . . . . . . . . . . . . . . . . . . . 12.5A C T(RMS) Peak Forward Surge Current (1/2 Cycle Sine Wave, 60Hz, T = 40 to +100C), I . . . . . 200A J TSM 2 2 Fusing Current (T = 40 to +100C, t = 1 to 8.3ms), I t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170A s J Forward Peak Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W GM Forward Average Gate Power, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W G(AV) Forward Peak Gate Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A GM Peak Forward Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19V GF Peak Reverse Gate Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V GR Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +100C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7C/W thJC Note 1. V and V can be applied on a continuous DC basis without incurrent damage. Ratings DRM RRM apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. Electrical Characteristics: (V = 400V, T = +25C unless otherwise specified) D C Parameter Symbol Test Conditions Min Typ Max Unit Peak Forward Blocking Current I T = +100C 3 mA DRM J T = +25C 10 A J Peak Reverse Blocking Current I T = +100C 1.5 mA RRM J T = +25C 10 A JElectrical Characteristics (Contd): (V = 400V, T = +25C unless otherwise specified) D C Parameter Symbol Test Conditions Min Typ Max Unit Forward ON Voltage V I = 25A Peak, Note 2 1.1 1.8 V TM TM Gate Trigger Current (Continuous DC) I V = 12V, R = 24 , T = +25C 7 40 mA GT D L J V = 12V, R = 24 , T = 40C 80 mA D L J Gate Trigger Voltage (Continuous DC) V V = 12V, R = 24 , T = 40C 1 3 V GT D L J V = 12V, R = 24 , T = +25C 0.68 2 V D L J V = 12V, R = 24 , T = +100C 0.3 V D L J Holding Current I V = 12V, I = 0.5A 20 50 mA H D T TurnOn Time t I = 8A, I = 0.2A, t = 100ns 0.5 s gt TM G r TurnOff Time t I = 8A, I = 0.2A, dv/dt = 20V/ s, 20 s q TM G di/dt = 30A/ s, T = +80C, C Pulse Width 50 s Forward Voltage Application Rate dv/dt T = +100C 10 100 V/ s C Exponential Note 2. Pulse test: Pulse Width 1ms, Duty Cycle 1%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Cathode 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Gate Anode/Case
