X-On Electronics has gained recognition as a prominent supplier of NTE315 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE315 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE315 NTE

NTE315 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE315
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 50V; 1A; 750mW; TO92
Datasheet: NTE315 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 8.138 ea
Line Total: USD 162.76 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 20
Multiples : 1
20 : USD 8.138
50 : USD 4.8735
100 : USD 2.322
200 : USD 2.1465
500 : USD 2.0115

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5959
3 : USD 3.2295
7 : USD 2.3475
19 : USD 2.2253

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE315 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE315 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE315 Silicon NPN Transistor, Medium Power Amp Features: AF HF Medium Power Amplifier Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectortoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V CBO CollectortoEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CEO EmittertoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current. I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A B Collector Power Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +120C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to +150C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 25V, I = 0 0.2 A CBO CB E Emitter Cutoff Current I V = 6V, I = 0 0.2 A EBO EB C Base to Emitter Voltage V V = 6V, I = 5mA 0.7 V BE CE C CollectorEmitter Sustaining Voltage V I = 2mA 50 V CEO(sus) C CollectorEmitter Saturation Voltage V I = 1A, I = 50mA 0.3 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 50mA 1.0 V BE(sat) C B DC Current Gain h V = 2V, I = 100mA 199 649 FE1 CE C h V = 1V, I = 1A 70 FE2 CE C Small Signal Current Gain h V = 2V, I = 10mA, 18 dB fe CB E f = 10MH Z Collector Output Capacitance C V = 10V, I = 0, f = 1MH 16 40 pf C CB E Z.343 (8.73) Max .492 (12.5) Min .024 (0.62) Max E C B .102 (2.6) Max .059 (1.5) Typ .018 (0.48) .197 (5.0) .118 (3.0) Max .236 (6.0)Dia Max .102 (2.6) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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