NTE318 Silicon NPN Transistor RF Power Output Description: The NTE318 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communica- tions. This device utilizes improved metallization systems to achieve extreme ruggedness under se- vere operating conditions. Features: Designed for HF military and commercial equipment 40W minimum with greater than 10.0dB gain Withstands severe mismatch under operating conditions Low inductance Stripline Package Absolute Maximum Ratings: Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Maximum Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A C Total Device Dissipation (+25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W T Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W thJC Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T 65. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +200C stg Electrical Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 1 18 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 200mA, V = 0, Note 1 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 2.5mA, I = 0 4 V (BR)EBO E C Collector CutOff Current I V = 15V, I = 0 1 mA CBO CB E DC Current Gain h V = 5V, I = 250mA 10 FE CE C Gain Bandwidth f V = 13.5V, I = 100mA 200 MHz t CE C Output Capacitance C V = 12.5V, I = 0, 200 pF ob CB C F = 1.0MHz O Amplifier Power Out P 28MHz/12.5V 47 W O Amplifier Power Gain P 10 dB g Note 1. Pulsed through 25mH Inductor.725 (18.42) .127 (3.17) Dia (2 Holes) EC .250 (6.35) BE .225 (5.72) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42)