NTE319 Silicon NPN Transistor VHF Amp with Forward AGC Features: Low Feedback Capacity (C ) 0.13pF Typ, 0.22pF Max CB High Unneutralized Power Gain 27dB Min at 45MHz V Guaranteed for 30dB and 50dB at 45MHz AGC Absolute Maximum Ratings: (Note 1) CollectortoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CBO Collector toEmitter Voltage (Note 2), V 20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO EmittertoBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V EBO Total Dissipation (Note 3), P D T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.260W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.175W A Operating Junction Temperature, T +175. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C stg Note 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. Note 2. Rating refers to a highcurrent point where collector toemitter voltage is lowest. Note 3. These ratings give a maximum junction temperature of 175c and junctiontocase thermal resistance of 583 C/W (derating factor of 1.73mW/C) junctiontoambient thermal resistance of 850 C/W (derating factor of 1.17mW/ C). Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Power Gain PG V = 2V, f = 45MHz 27 29 dB BE Noise Figure NF V = 2V, f = 45MHz 2.7 5.0 dB BE AGC Voltage for 30dB Gain Reduction V V = 12V, f = 45MHz 3.3 4.15 5.0 V AGC CC AGC Voltage for 50dB Gain Reduction V = 12V, f = 45MHz 6.15 7.5 V CC Collector Current for 30dB Gain Reduction I V = 12V, f = 45MHz 7.2 mA AGC CC CollectortoBase Capacitance C V = 10V, I = 0, f = 1MHz 0.13 0.22 pF cb CB E DC Current Gain h V = 10V, I = 2mA 20 80 220 FE CE C CollectorEmitter Sustaining Voltage V I = 1mA, I = 0, Note 2 20 V CEO(sus) C B Collector Cutoff Current I V = 20V, I = 0 50 nA CBO CB E CollectorBase Breakdown Voltage V I = 100A, I = 0 20 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 100A, I = 0 3.0 V (BR)EBO E C Note 2. Rating refers to a highcurrent point where collector toemitter voltage is lowest.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Saturation Voltage V I = 1mA, I = 5mA 2.75 V CE(sat) C B High Frequency Current Gain h V = 10V, I = 2mA, f = 100MHz 3 5 V FE CE C Input Resistance, Common Emitter R V = 10V, I = 2mA, f = 45MHz 400 W iep CE C Output Resistance, Common Emitter R 67 k oep Input Capacitance, Common Emitter C 16 pF iep Output Capacitance, Common Emitter C 1.2 pF oep .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Emitter Base Collector 45 Case .040 (1.02)