NTE320/NTE320F Silicon NPN RF Power Transistor 40W 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF largesignal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: Specified 12.5V, 175MHz Characteristics: Output Power: 40W Minimum Gain: 4.5dB Efficiency: 70% Available in Two Different Package Styles: T72 Stud Mount: NTE320 W52K Flange Mount: NTE320F Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A C Total Device Dissipation (T = +25C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 460mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Stud Torque (NTE320 Only, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5in. lb. Note 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. Note 2. For repeated assembly, use 5in. lb.Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B V I = 20mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +55C 10 mA CES CE BE C I V = 15V, I = 0 2.5 mA CBO CB E ON Characteristics DC Current Gain h I = 1A, V = 5V 5 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 170 200 pF ob CB E Function Test CommonEmitter Amplifier Power Gain G P = 40W, V = 12.5V, f = 175MHz 4.5 dB PE O CC Collector Efficiency P = 40W, V = 12.5V, f = 175MHz 70 % O CC 175MHz Test Circuit +12.5Vdc + 100 F 0.1 F RFC 1000pF L2 C4 SHIELD RF Output C1 L1 RF Input DUT C2 100pF C3 100pF RFC C1, C2, C3, C4 5.0 80pF ARCO 462 L2 1 Turn, 14 AWG, 3/8 ID, Length Plus Leads = 1.000 L1 Straight Wire, 14 AWG, 13/8 Long RFC VK20020/4B, FERROXCUBE