NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citi- zenBand and other highfrequency communications equipment operating to 30MHz. Higher break- down voltages allow a high percentage of upmodulation in AM circuits. Features: Output Power: 3.5W (Min) V = 13.6V CC Power Gain: 11.5dB (Min) High Collector Emitter Breakdown Voltage: V 65V (BR)CES DC Current Gain: Linear to 500mA Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V EB Continuous Collector Current, I 500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W A D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/C Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C D Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W thJC Thermal Resistance, Junction to Ambient (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . 125C/W thJA Note 1. R is measured with the device soldered into a typical printed circuit board. thJAElectrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 150mA, V = 0, Note 2 65 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 3 V (BR)EBO E C Collector Cutoff Current I V = 50V, I = 0 0.01 mA CBO CB E ON Characteristics DC Current Gain h I = 100mA, V = 10V, Note 3 10 FE C CE Dynamic Characteristics Output Capacitance C V = 12V, I = 0, f = 1MHz 40 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 3.5W, V = 13.6V, f = 27MHz 11.5 dB PE O CC Output Power P P = 250mW, V = 13.6V, f = 27MHz 3.5 W O IN CC Collector Efficiency P = 3.5W, V = 13.6V, f = 27MHz, 70 % O CC Note 4 Percentage UpModulation f = 27MHz, Note 5 85 % Note 2. Pulsed thru a 25mH inductor Note 3. Pulse test: Pulse Width 300 s, Duty Cycle 2.0% R P F O 100 = Note 4. (V ) (I ) CC C Note 5. Percentage UpModulation is measured by setting the Carrier Power (P ) to 3.5 Watts with C V = 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after CC doubling the original power input to simulate driver modulation (at a 25% duty cycle for ther- mal considerations) and raising the V to 25V (to simulate the modulating voltage). Per- CC centage UpModulation is then determined by the relation: PEP 1/2 100 Percentage UpModulation = 1 P C 27MHz Test Circuit V CC 13.6V C5 C6 RFC2 L2 C4 OUTPUT INPUT C1 L1 C3 C2 C1, C2 9.0 180pF ARCO 463 or Equivalent RFC1 C3, C4 5.0 80pF ARCO 462 or Equivalent C5 0.02 F Ceramic Disc C6 0.1 F Ceramic Disc RFC1 4 Turns 30 Enameled Wire Wound on Ferroxcube Bead Type 5659065/3B RFC2 26 Turns 22 Enameled Wire (2 Layers 1 13 Turns Each Layer) / Inner Diameter 4 L1 0.22 H Molded Choke L2 0.68 H Molded Choke