NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors General Purpose Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: CollectorBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V E CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V CEO EmitterBase Voltage (I = 0), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V C EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA B Total Power Dissipation, P tot T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W C T = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W A Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4C/W thJC Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 120V, I = 0 1 A CBO CB E I V = 80V, I = 0 10 A CEO CE B I V = 120V, V = 1.5V 1 A CEV CE BE V = 120V, V = 1.5V, T = +150C 1 mA CE BE C Emitter Cutoff Current I V = 4V, I = 0 1 A EBO EB C CollectorEmitter Sustaining Voltage V I = 10mA, I = 0, Note 1 120 V CEO(sus) C B CollectorEmitter Saturation Voltage V I = 250mA, I = 25mA, Note 1 0.6 V CE(sat) C B I = 500mA, I = 50mA, Note 1 1.0 V C B I = 1A, I = 200mA, Note 1 2.0 V C B Note 1. Pulse Duration = 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit BaseEmitter Voltage V V = 2V, I = 250mA 1.0 V BE CE C DC Current Gain h V = 2V, I = 250mA, Note 1 40 150 FE CE C V = 2V, I = 1A, Note 1 5 CE C Transition Frequency f V = 10V, I = 100mA, f = 10MHz 30 MHz T CE C CollectorBase Capacitance C V = 20V, I = 0, f = 1MHz 50 pF cbo CB E SmallSignal Current Gain h V = 1.5V, I = 200mA, f = 1kHz 40 fe CE C Note 1. Pulse Duration = 300 s, Duty Cycle 2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)