NTE325 Silicon NPN RF Power Transistor 50W 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction to Case, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53C/W JC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 20 V (BR)CEO C B V I = 20mA, V = 0 40 V (BR)CES C BE CollectorBase Breakdown Voltage V I = 20mA, I = 0 40 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C ON Characteristics DC Current Gain h I = 1A, V = 5V 10 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 1MHz 200 pF ob CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Functional Test CommonEmitter Amplifier Power Gain G 11 15 dB V = 13.6V, P = 50W, PE CC OUT I (max) = 6.13A, f = 30MHz C Collector Efficiency 50 % Series Equivalent Input Impedance Z V = 13.6V, P = 50W, 1.56j.89 in CC OUT f = 30MHz Series Equivalent Output Imnpedance Z 174j.50 out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat