NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V CEO EmitterBase Voltage, V 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C tot Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/ C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200 C j Storage Temperatures Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55 C/W thJC Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 2 24 V (BR)CEO C B V I = 100mA, V = 0, Note 2 48 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 0, I = 10mA 4 V (BR)EBO C E Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB E I V = 15V, I = 0, T = +125C 10 mA CES CB E A ON Characteristics DC Current Gain h V = 5V, I = 2.4A 3 7 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 0.1 to 1.0MHz 180 230 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 40W, V = 12.5V, f = 50MHz 7.5 dB PE OUT CC Collector Efficiency 50 % Note 2. Pulsed through 25mH inductor.1.065 (27.05) Max .525 (13.35) C 45 .225 (5.72) E E .112 (2.85) .395 (10.05) B .500 (12.7) Dia .090 (2.28) .260 (6.6) .075 (1.9) .420 (10.66) Dia .115 (2.92) 1032 NC3A Wrench Flat