X-On Electronics has gained recognition as a prominent supplier of NTE339 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE339 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE339 NTE

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Part No.	NTE339
Manufacturer:	NTE
Category:	Bipolar Transistors - BJT
Description:	Transistor: NPN; bipolar; RF; 24V; 7A; 100W; Pout:40W
Datasheet:	NTE339 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

2: USD 52.362 ea
Line Total: USD 104.72

Availability - 0

MOQ: 2 Multiples: 1
Pack Size: 1

NTE339 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 2 Multiples : 1	2 : USD 52.362 10 : USD 37.6457 25 : USD 35.136 50 : USD 32.94

0 Ship by Thu. 26 Dec to Mon. 30 Dec MOQ : 1 Multiples : 1	1 : USD 48.7831

Specifications

Manufacturer NTE NTE
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Mounting Screw Screw
Kind Of Transistor Rf Rf
Polarisation Bipolar Bipolar
Type Of Transistor Npn Npn
Output Power 40 W 40 W
Collector-Emitter Voltage 24 V 24 V
Collector Current 7 A 7 A
Power Dissipation 100 W 100 W
Frequency 27 To 50 MHz 27 To 50 MHz
Current Gain 7 7

We are delighted to provide the NTE339 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE339 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NTE339 Silicon NPN Transistor RF Power Output Description: The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz. Specified 12.5 Volt, 50MHz Characteristics Output Power = 40 Watts Minimum Gain = 7.5dB Efficiency = 50% Absolute Maximum Ratings: (T = +25C unless otherwise specified) C Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48V CBO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V CEO EmitterBase Voltage, V 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W C tot Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 571mW/ C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200 C j Storage Temperatures Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.55 C/W thJC Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0, Note 2 24 V (BR)CEO C B V I = 100mA, V = 0, Note 2 48 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 0, I = 10mA 4 V (BR)EBO C E Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB E I V = 15V, I = 0, T = +125C 10 mA CES CB E A ON Characteristics DC Current Gain h V = 5V, I = 2.4A 3 7 FE CE C Dynamic Characteristics Output Capacitance C V = 12.5V, I = 0, f = 0.1 to 1.0MHz 180 230 pF ob CB E Functional Test CommonEmitter Amplifier Power Gain G P = 40W, V = 12.5V, f = 50MHz 7.5 dB PE OUT CC Collector Efficiency 50 % Note 2. Pulsed through 25mH inductor.1.065 (27.05) Max .525 (13.35) C 45 .225 (5.72) E E .112 (2.85) .395 (10.05) B .500 (12.7) Dia .090 (2.28) .260 (6.6) .075 (1.9) .420 (10.66) Dia .115 (2.92) 1032 NC3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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NTE ELECTRONICS, INC.

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