NTE343 Silicon NPN Transistor RF Power Output (P = 14W, 175MHz) O Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: High Power Gain: G 7.5dB (V = 13.5V, P = 14W, f = 175MHz) pe CC O Ability to Withstand more than 20:1 VSWR Load when Operated at: V = 15.2V, P = 18W, f = 175MHz CC O Application: 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (T = +25C unless otherwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO CollectorEmitter Voltage (R = ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V BE CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A C Collector Dissipation, P C T = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJA Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Emitter to Base Breakdown Voltage V I = 10mA, I = 0 35 V (BR)CBO C E Collector to Base Breakdown Voltage V I = 50mA, R = 17 V (BR)CEO C BE Collector to Emitter Collector Cutoff Current I V = 25V, I = 0 1000 A CBO CB E Emitter Cutoff Current I V = 3V, I = 0 500 A EBO EB C DC Forward Current Gain h V = 10V, I = 100mA, Note 1 10 50 180 FE CE C Output Power P V = 13.5V, P = 2.5W, 14 15 W CC in O f = 175MHz Collector Efficiency 60 70 % C Note 1. Pulse Test: Pulse Width = 150 s, Duty Cycle = 5%. .358 (9.1) .051 (1.3) .142 (3.62) Dia E .126 (3.2) .485 (12.32) .395 (9.05) BE C .189 (4.8) .485 (12.32) Min .100 (2.54) .019 (0.48) .177 (4.5) .347 (9.5) .122 (3.1)