X-On Electronics has gained recognition as a prominent supplier of NTE343 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE343 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE343 NTE

NTE343 electronic component of NTE
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See Product Specifications
Part No.NTE343
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 17V; 3.5A; 25W; TO220; Pout:15W
Datasheet: NTE343 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 63.575 ea
Line Total: USD 63.58 
Availability - 9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 63.575
5 : USD 51.775
10 : USD 51
25 : USD 48.775
50 : USD 46.1
100 : USD 45.4125
250 : USD 43.7125

   
Manufacturer
Product Category
Mounting
Case
Kind Of Transistor
Polarisation
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE343 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE343 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE343 Silicon NPN Transistor RF Power Output (P = 14W, 175MHz) O Description: The NTE343 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: High Power Gain: G 7.5dB (V = 13.5V, P = 14W, f = 175MHz) pe CC O Ability to Withstand more than 20:1 VSWR Load when Operated at: V = 15.2V, P = 18W, f = 175MHz CC O Application: 10 to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (T = +25C unless otherwise specified) C CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V CBO CollectorEmitter Voltage (R = ), V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V BE CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5A C Collector Dissipation, P C T = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W A T = 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJA Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6C/W thJCElectrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakdown Voltage V I = 10mA, I = 0 4 V (BR)EBO E C Emitter to Base Breakdown Voltage V I = 10mA, I = 0 35 V (BR)CBO C E Collector to Base Breakdown Voltage V I = 50mA, R = 17 V (BR)CEO C BE Collector to Emitter Collector Cutoff Current I V = 25V, I = 0 1000 A CBO CB E Emitter Cutoff Current I V = 3V, I = 0 500 A EBO EB C DC Forward Current Gain h V = 10V, I = 100mA, Note 1 10 50 180 FE CE C Output Power P V = 13.5V, P = 2.5W, 14 15 W CC in O f = 175MHz Collector Efficiency 60 70 % C Note 1. Pulse Test: Pulse Width = 150 s, Duty Cycle = 5%. .358 (9.1) .051 (1.3) .142 (3.62) Dia E .126 (3.2) .485 (12.32) .395 (9.05) BE C .189 (4.8) .485 (12.32) Min .100 (2.54) .019 (0.48) .177 (4.5) .347 (9.5) .122 (3.1)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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