X-On Electronics has gained recognition as a prominent supplier of NTE347 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE347 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE347 NTE

NTE347 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE347
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; RF; 18V; 600mA; 15W; Pout:3W
Datasheet: NTE347 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 52.8357 ea
Line Total: USD 105.67

Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 2
Multiples : 1
2 : USD 52.8357
10 : USD 26.5089
25 : USD 24.7371
50 : USD 24.0909
100 : USD 23.1883

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 36.33
2 : USD 34.342

   
Manufacturer
Product Category
Mounting
Kind Of Transistor
Polarisation
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
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We are delighted to provide the NTE347 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE347 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE347 Silicon NPN Transistor RF Power Output P = 3W 175MHz O Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili- tary and industrial equipment operating to 240MHz. Features: Low lead inductance stripline package for easier design and increased broadband capability. Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. Specified 13.6 volt, 175MHz Characteristics Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V EB Continuous Collector Current, I 0.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W A D Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/ C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V I = 200mA, I = 0 18 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 200mA, I = 0 36 V (BR)CES C B EmitterBase Breakdown Voltage V I = 1.0mA, I = 0 4.0 V (BR)CBO E C Collector Cutoff Current V V = 15V, I = 0 1.0 mA (BR)CBO CB E ON CHARACTERISTICS DC Current Gain h I = 100mA, V = 5.0Vdc 5.0 FE C CE DYNAMIC CHARACTERISTICS Output Capacitance C V = 15V, I = 0, f = 0.1 to 1.0 MHz 15 30 pF ob CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit FUNCTIONAL TEST Power Input P 0.35 0.45 W P = 3W, V = 13.6V, in OUT CE f f = 175MHz175MHz CommonEmitter Amplifier Power Gain G 8.2 dB PE Collector Efficiency 50 % 1.065 (27.08) Max .530 (13.46) C .220 (5.58) E E .305 (7.75) .030 (.762) B .375 (9.52) Dia .090 (2.28) .260 (6.60) .075 .730 .005 (0.15) (1.94) .325 (8.28) Dia (18.54) .115 (2.92) 832 NC3A Wrench Flat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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