NTE348 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE348 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in military and industrial equipment to 300MHz. Features: Specified 12.5V, 175MHz Characteristics: Output Power = 4W Minimum Gain = 12dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A C Total Device Dissipation (Note 1, T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68.5mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 18 V (BR)CEO C B V I = 5mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 1mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 0.25 mA CBO CB E I V = 15V, V = 0, T = +55C 5 mA CES CE BE C ON Characteristics DC Current Gain h I = 250mA, V = 5V 5 FE C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 15 20 pF ob CB E Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 4W, f = 175MHz 12 dB PE out Power Gain 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat