NTE349 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE349 is a silicon NPN transistor in a T72H type package designed primarily for use in 13.6V VHF largesignal amplifier applications required in military and industrial equipment to 240MHz. Features: Specified 13.6V, 175MHz Characteristics: Output Power = 10W Minimum Gain = 5.2dB Efficiency = 50% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0171mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 200mA, I = 0 18 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 2.5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB E ON Characteristics DC Current Gain h I = 250mA, V = 5V 5 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1 to 1MHz 35 70 pF ob CB EElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Functional Tests (V = 13.6V unless otherwise specified) CE CommonEmitter Amplifier G P = 10W, f = 175MHz 5.2 dB PE out Power Gain Power Input P P = 10W, f = 175MHz 3 W in OUT Collector Efficiency P = 10W, f = 175MHz 50 % out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat