NTE350F Silicon NPN Transistor RF Power AMP Description: The NTE350F is designed for 12.5 Volt largesignal amplifier applications required in commercial and industrial equipment operating to 300MHz. Features: Specified 12.5 Volt, 175MHz Characteristics: Output Power = 15 Watts Minimum Gain = 6.3dB Efficiency = 60% Characterized with Series Equivalent Large Signal Impedance Parameters Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Base Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A C Total Device Dissipation, P D T = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31W C Derate above +25 C 177W/. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. Device is designed for RF operation. The total dissipation rating applies only when the devices are operated as RF amplifiers. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics V I = 20mA, I = 0 18 V CollectorEmitter Breakdown Voltage (BR)CEO C B V I = 10mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 2.0mA, I = 0 4.0 V (BR)EBO E C Collector Cutoff Current I V = 15V, V = 0, T = +55C 8.0 mA CES CE BE C I V = 15V, I = 0 0.5 mA CBO CB E ON Characteristics DC Current Gain h I = 0.5A, V = 5.0V 5.0 FE C CE Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 70 85 pF ob CB E Functional Test CommonEmitter Amplifier Gain G P = 15W, V = 12.5V, f = 175MHz 6.3 dB PE OUT CC Collector Efficiency P = 15W, V = 12.5V, f = 175MHz 60 % OUT CC.122 (3.1) Dia .725 (18.42) (2 Holes) EC .250 (6.35) BE .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)