NTE351 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF largesignal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum Gain = 6.2dB Efficiency = 65% Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A C Total Device Dissipation (Note 1, T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 370mW/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +200C stg Note 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B V I = 15mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 5mA, I = 0 4 V (BR)EBO E C Collector Cutoff Current I V = 15V, I = 0 1.0 mA CBO CB E I V = 15V, V = 0, T = +55C 10 mA CES CE BE C ON Characteristics DC Current Gain h I = 1A, V = 5V 5 FE C CEElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Output Capacitance C V = 15V, I = 0, f = 0.1MHz 110 130 pF ob CB E Functional Tests (V = 12.5V unless otherwise specified) CC CommonEmitter Amplifier G P = 25W, f = 175MHz 6.2 dB PE out Power Gain Collector Efficiency P = 25W, f = 175MHz 65 % out 1.040 (26.4) Max .520 (13.2) C .230 EE (5.84) B .385 (9.8) .100 (2.54) Dia .005 (0.15) .168 (4.27) .750 (19.05) 832NC3A Wrench Flat